STABLE TRANSVERSE-MODE EMISSION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS ANTIGUIDED BY AMORPHOUS GAAS LAYER

Authors
YOO BS CHU HY PARK MS PARK HH LEE EH
Citation
Bs. Yoo et al., STABLE TRANSVERSE-MODE EMISSION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS ANTIGUIDED BY AMORPHOUS GAAS LAYER, Electronics Letters, 32(2), 1996, pp. 116-117
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
2
Year of publication
1996
Pages
116 - 117
Database
ISI
SICI code
0013-5194(1996)32:2<116:STEIVS>2.0.ZU;2-2
Abstract
The authors report the successful development of a method stabilising the fundamental transverse mode of a vertical-cavity surface-emitting laser using a low-temperature-deposited amorphous GaAs (a-GaAs) layer of a high refractive index. For a device of 10 mu m diameter, stable f undamental mode emission has been observed over a wide range of curren t. Results are attributed to the antiguide effect of the a-GaAs-buried structure.