STEP-COVERAGE METALLIZATION USING SELECTED-AREA EVAPORATION TECHNIQUEFOR NARROW MESA INGAASP INP LASERS/

Authors
MATSUYAMA T FURUKAWA C MAKUTA A KOBAYASHI H OHTSUKA K TANAKA A KINOSHITA J
Citation
T. Matsuyama et al., STEP-COVERAGE METALLIZATION USING SELECTED-AREA EVAPORATION TECHNIQUEFOR NARROW MESA INGAASP INP LASERS/, Electronics Letters, 32(2), 1996, pp. 117-119
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
2
Year of publication
1996
Pages
117 - 119
Database
ISI
SICI code
0013-5194(1996)32:2<117:SMUSET>2.0.ZU;2-R
Abstract
A new low-capacitance narrow mesa-stripe structure for InGaAsP/InP pla nar buried heterostructure (PBH) DFB lasers is presented. This structu re is realised using a newly developed selected area evaporation techn ique. The electrode layer is metalised on one of the vertical side wal ls of the narrow mesa, with self-aligned bonding pad connection. The a uthors report the Fabrication of the electrode structure, the device f abrication and its performance and reliability.