D-BAND SI-IMPATT DIODES WITH 300 MW CW OUTPUT POWER AT 140 GHZ

Authors
WOLLITZER M BUECHLER J SCHAFFLER F LUY JF
Citation
M. Wollitzer et al., D-BAND SI-IMPATT DIODES WITH 300 MW CW OUTPUT POWER AT 140 GHZ, Electronics Letters, 32(2), 1996, pp. 122-123
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
2
Year of publication
1996
Pages
122 - 123
Database
ISI
SICI code
0013-5194(1996)32:2<122:DSDW3M>2.0.ZU;2-Q
Abstract
Silicon flat profile double drift (DD) and double Read (DLHL) IMPATT d iodes have been designed and fabricated, using a novel beamlead proces s. The goal for the design of the active layer is a maximum negative r esistance of the device for a given DC power density. Experimental res ults are 225mW of RF power with DD diodes and 300mW for DLHL diodes, b oth in the 140GHz range.