CARRIER CONCENTRATION EFFECTS ON HOT-ELECTRONS NOISE IN N(+)NN(+) AL0.25GA0.75AS DEVICES

Authors
DEMURCIA M RICHARD E LLINARES P PASCAL F VANBREMEERSCH J
Citation
M. Demurcia et al., CARRIER CONCENTRATION EFFECTS ON HOT-ELECTRONS NOISE IN N(+)NN(+) AL0.25GA0.75AS DEVICES, Electronics Letters, 32(2), 1996, pp. 137-138
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
2
Year of publication
1996
Pages
137 - 138
Database
ISI
SICI code
0013-5194(1996)32:2<137:CCEOHN>2.0.ZU;2-#
Abstract
High frequency noise of Al0.25Ga0.75As resistors with two different do ping levels was measured against electric field. The noise temperature s and the diffusion coefficients are discussed in their relation to ca rrier concentrations. The results show that 1/f noise is observed in t he hot carrier range.