PSEUDOMORPHIC ALGAAS INGAAS/GAAS HEMTS IN LOW-COST PLASTIC PACKAGING FOR DBS APPLICATION/

0.2 mu m gate length pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cos t plastic packaging have been manufactured in our laboratory. The PHEM Ts show typical peak extrinsic transconductances of 390 - 430 mS/mm. F rom S-parameter measurements, the PHEMTs show typical current-gain cut off frequencies of 65 - 72 GHz. The devices on-wafer exhibited 0.40 - 0.47 dB noise figure and 12.6 - 13.5 dB associated gain at 12 GHz, res pectively. The authors report the first demonstration of devices in a plastic packaging with 1.0 - 1.2 dB noise Figure and 9.5 - 9.9 dB asso ciated gain. The volume production of high performance AlGaAs/InGaAs/G aAs PHEMTs in plastic packaging is suitable for direct-broadcast satel lite applications.