Kinetics of the many-stage process of particle nucleation and growth i
n low-pressure rf discharge in silane SiH4-Ar is considered. The parti
cle growth is considered in an analytical model as a chain of negative
-ion molecular reactions, stimulated by vibrational excitation. In the
framework of this model, a limitation of first generation particle si
ze is explained as well as the strong temperature effect on cluster gr
owth. A theory of critical phenomena of cluster trapping in discharge
area has been elaborated to describe the neutral particle selection by
size, and the particle concentration increases during a period exceed
ing the residence time in plasma. Finally, an analytical model of crit
ical phenomena of particle coagulation and its influence on plasma par
ameters is developed to explain the latest experimental results on sup
ersmall 2-10 nm cluster kinetics. All theoretical results are presente
d in comparison with corresponding new experimental data and with resu
lts of an especially made computer simulation. (C) 1996 American Insti
tute of Physics.