Km. Luken et Ra. Morrow, DIFFUSING ARSENIC VACANCIES AND THEIR INTERACTION WITH THE NATIVE DEFECT EL2 IN GAAS, Journal of applied physics, 79(3), 1996, pp. 1388-1390
We model the indiffusion of arsenic vacancies and their interaction wi
th the midgap electron trap EL2 in GaAs samples that occurs during unp
rotected and proximity high-temperature anneals. From fits to existing
data we find the diffusive capture of V-As by EL2 to be inhibited by
a large (>1 eV) repulsive barrier of unknown origin. In conjunction wi
th other results from the literature we estimate the diffusivity of V-
As to be 4x10(-3) exp(-1.8 eV/kT) cm(2)/s, a value uncertain by at lea
st an order of magnitude. (C) 1996 American Institute of Physics.