MONTE-CARLO SIMULATION OF IN SURFACE SEGREGATION DURING THE GROWTH OFINXGA1-XAS ON GAAS(001)

The In surface segregation during the growth of InxGa1-xAs on GaAs(001 ) has been investigated through a Monte Carlo simulation taking into a ccount the difference between the binding energies of InAs and GaAs an d the effect of the epitaxial strain. Photoluminescence energies of qu antum-well structures calculated from simulated composition profiles o btained at different temperatures are found to be in good agreement wi th the experimental ones. It is shown that Monte Carlo simulation is a very powerful way to predict the variation of the In composition prof ile as a function of growth parameters. It can, moreover, be easily ex tended to different materials, strain conditions, and surface morpholo gies.