MAGNETICALLY EXCITED PLASMA OXIDATION OF GAAS

Relatively good-quality oxide of GaAs was grown using magnetically exc ited oxygen plasma (helicon wave) with substrate heating (300 degrees C) or a mixture of Ar gas in oxygen. Post-thermal annealing at 400 deg rees C in oxygen substantially improved the capacitance-voltage (C-V) characteristics, which showed very small frequency dispersion without hysteresis. However, no inversion behavior was observed. X-ray photoel ectron spectroscopic measurements showed that As2O3 and Ga2O3 are the main component species of these oxides.