DOMAIN INVERSION BY AN ELECTRON-BEAM-INDUCED ELECTRIC-FIELD IN MGO-LINBO3, LINBO3 AND LITAO3

This report is, as far as we know, the first to demonstrate ferroelect ric domain inversion in a photorefractive-damage-resistant MgO:LiNbO3 (MgO:LN) crystal upon electron beam irradiation. The domain inversion was found to be achieved by applying an electron-beam-induced electric field (EBIEF). BS comparing the requirements of electron beam irradia tion for domain inversion in MgO:LiN, LiNbO3 and LiTaO3, a domain in M gO:LN was found to exhibit the highest critical values of current i(c) and time t(c) among these crystals. The relationship between i(c) and t(c) was explained in terms of a simple charge leakage model.