T. Saitoh et H. Kanbe, FABRICATION OF A NANOMETER-SCALE GAAS RIDGE STRUCTURE WITH A 92-MHZ ANODE-COUPLED REACTIVE ION ETCHER USING CL-2 N-2 MIXED PLASMAS/, JPN J A P 2, 35(1A), 1996, pp. 60-62
A vertical etch profile of GaAs is achieved at a low bias voltage with
a 92-MHx anode-coupled reactive ion etcher using chlorine-nitrogen pl
asmas. The added nitrogen gas not only dilutes the concentration of re
active chlorine radicals in the plasma also plays an important role in
the vertical etching of GaAs. XPS analysis reveals no sidewall passiv
ation by nitrogen. Reactive ion etching: with a Cl-2/N-2 mixed plasma
was used to fabricate ultra-fine GaAs patterns with a nanometer-scale
ridge structure having a cross-section 15-nm wide by 150-nm high.