PHOTOPUMPED STIMULATED-EMISSION FROM HOMOEPITAXIAL GAN GROWN ON BULK GAN PREPARED BY SUBLIMATION METHOD

We have observed stimulated emission at room temperature from a photop umped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by atmospheric metalorganic chemical vapor deposition (MOCVD) on small hexagonal bulk GaN prepared by the sublimation method. The lasi ng threshold of the pumping power density is 0.8G MW/cm(2) and the sti mulated emission is polarized with its electric vector perpendicular t o the c-axis.