HIGHLY CONDUCTIVE P-TYPE ZNTE-AS GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRIMETHYLARSINE

Highly conductive p-type ZnTe was grown by atmospheric metalorganic ch emical vapor deposition (MOCVD). The source materials were dimethylzin c and diisopropyltelluride. Arsenic was doped into ZnTe with trimethyl arsine. The carrier concentration depended on both the growth temperat ure and VI/II ratio. The highest carrier concentration measured in Hal l measurements was 1.3 x 10(19) cm(-3), which is the highest ever repo rted for MOCVD-grown ZnTe. Low-temperature photoluminescence spectra s howed strong As-related bound exciton lines and donor-to-acceptor reco mbination lines.