L. Bois et al., CHARACTERIZATION OF A BORO-SILICON OXYNITRIDE PREPARED BY THERMAL NITRIDATION OF A POLYBOROSILOXANE, Journal of alloys and compounds, 232(1-2), 1996, pp. 244-253
Fine physicochemical characterization has allowed proposing of a mecha
nism for the nitridation pathway of a polyborosiloxane polymer into a
new ceramic material in the SiBON system. A polyborosiloxane, a polyme
r consisting of Si-O-B linkages, was synthesized by the condensation r
eaction between tetrachlorosilane SiCl4 and boric acid B(OH)(3). The p
olymer was then thermally nitridated under flowing ammonia into an oxy
nitride of boron and silicon. This conversion was observed using vario
us structural techniques: chemical analysis, X-ray diffraction, infrar
ed spectroscopy and X-ray photoelectron spectroscopy. The nitridation
process can be divided in two main stages: (i) between 400 and 800 deg
rees C, B-N bonds are formed by B-O bond cleavage; (ii) above 1000 deg
rees C, Si-N bonds are formed by Si-O bond cleavage, The oxynitride re
mains amorphous even at 1300 degrees C. Pyrolysis up to 1700 degrees C
led to a partial crystallization of hexagonal boron nitride.