AUGER AND ENERGY-LOSS SPECTROSCOPY ANALYSIS OF SILICON-CARBIDE (SIC) SURFACES

Auger electron spectroscopy and electron loss spectroscopy were used w ith different (Si-C) samples. The alpha-SiC(0001) surface of industria l silicon carbide crystals, a (Si-C) compound resulting from the impla ntation of carbon at 30 keV into a silicon substrate and beta-SiC laye rs formed by evaporation of carbon on Si(111) at 1080 degrees C were a nalysed. Characteristic Si-LVV and C-KVV Auger spectra of band type st ructure, recorded in N(E) mode, are related to silicon carbide. These spectra are detected from alpha-SiC, beta-SiC layers and from the subs trate layers of the implanted samples as revealed after argon ion beam etching. Heat treatment of the samples in UHV induced the formation o f excess carbon at the surface. The Auger and loss spectra of such a C -rich surface are compared to those of pure graphite.