SINTERING KINETICS OF SILICA-TITANIA SOL-GEL FILMS ON SILICON-WAFERS

Authors
Citation
Xm. Du et Rm. Almeida, SINTERING KINETICS OF SILICA-TITANIA SOL-GEL FILMS ON SILICON-WAFERS, Journal of materials research, 11(2), 1996, pp. 353-357
Citations number
24
Categorie Soggetti
Material Science
ISSN journal
08842914
Volume
11
Issue
2
Year of publication
1996
Pages
353 - 357
Database
ISI
SICI code
0884-2914(1996)11:2<353:SKOSSF>2.0.ZU;2-I
Abstract
The sintering behavior of 80SiO(2)-20TiO(2) sol-gel thin films on Si w afers, prepared by spin coating, was studied by the calculation of den sity asa function of temperature, from refractive index measurements a nd the Lorenz-Lorentz relationship. The sintering kinetics of the film s were fit to the Mackenzie and Shuttleworth model, over the temperatu re range of 700 degrees C-850 degrees C. Using this model, the viscosi ty was determined asa function of temperature. These gel films sintere d to full density at 850 degrees C.