ALL SELECTIVE MOVPE CROWN BH-LDS FABRICATED BY THE NOVEL SELF-ALIGNMENT PROCESS

1.3 mu m-strained MQW BH LD's with a current blocking structure have b een developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM (all selective MOVPE grown)-BH-LD's . The fabrication process, which completely eliminates semiconductor e tching, is very promising to realize high-performance LD's with excell ent uniformity and reproducibility. The light output power was remarka bly improved by a factor of two, compared with previous selective MOVP E-LD's.