We present the measurements of room-temperature electroabsorption in C
dZnSSe-ZnSSe semiconductor quantum wells that exhibit prominent excito
nic absorption peaks in the wavelength region around 500 nm, The elect
roabsorption of these wide-band-gap quantum wells primarily stems from
ionization of the room temperature excitons, Despite the large excito
n Linewidths in these structures, the magnitudes of field-induced abso
rption changes and absorption contrasts are sufficient for pragmatic a
pplications in optical information processing systems in the blue-gree
n spectral range.