CHARACTERIZATION OF SIPOS FILMS BY SPECTROSCOPIC ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY

Citation
G. Kragler et al., CHARACTERIZATION OF SIPOS FILMS BY SPECTROSCOPIC ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY, Applied physics. A, Solids and surfaces, 58(1), 1994, pp. 77-80
Citations number
10
Categorie Soggetti
Physics, Applied
ISSN journal
07217250
Volume
58
Issue
1
Year of publication
1994
Pages
77 - 80
Database
ISI
SICI code
0721-7250(1994)58:1<77:COSFBS>2.0.ZU;2-9
Abstract
The structural and compositional properties of undoped SIPOS thin film s have been studied by spectroscopic ellipsometry and transmission ele ctron microscopy. It is shown that in most cases the former method pro vides fast and reliable results. The growth rate and crystallinity of SIPOS layers are studied as a function of N2O concentration in the gas phase and annealing temperature.