PHOTOLUMINESCENCE STUDY OF C-60 DOPED POLYSTYRENE

Citation
C. Zhang et al., PHOTOLUMINESCENCE STUDY OF C-60 DOPED POLYSTYRENE, Applied physics letters, 68(7), 1996, pp. 943-945
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
7
Year of publication
1996
Pages
943 - 945
Database
ISI
SICI code
0003-6951(1996)68:7<943:PSOCDP>2.0.ZU;2-E
Abstract
We report here a new phenomenon in photoluminescence of C-60 doped in polystyrene. Under 488 nm cw laser radiation, the PL intensity of the sample was found to increase with time. With 10 h of irradiation, the PL signal strength increased by 10 times, comparable to that from poro us Si. The peak of the PL was found to shift to high frequency as well . More detailed studies showed that such an irreversible change of the sample might be a result of the lowering symmetry of oxidized C-60 fu llerene in the polystyrene. (C) 1996 American Institute of Physics.