II-VI QUANTUM-CONFINED STARK-EFFECT WAVE-GUIDE MODULATORS

Quantum confined Stark effect p-i-n waveguide modulators, grown on GaA s substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdS e multiquantum well structure as the guiding layer, have exhibited int ensity modulation at wavelengths of 496 and 501 nm with extinction rat ios of 6 and 4, respectively. These same devices have also demonstrate d a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity m odulation has also been observed in quaternary laser waveguide structu res, indicating that this is a device structure which is suitable for monolithic integration. (C) 1996 American Institute of Physics.