LOW-RESISTANCE ZN3P2 INP HETEROSTRUCTURE OHMIC CONTACT TO P-INP/

Authors
PARK MH WANG LC CHENG JY DENG F LAU SS PALMSTROM CJ
Citation
Mh. Park et al., LOW-RESISTANCE ZN3P2 INP HETEROSTRUCTURE OHMIC CONTACT TO P-INP/, Applied physics letters, 68(7), 1996, pp. 952-954
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
7
Year of publication
1996
Pages
952 - 954
Database
ISI
SICI code
0003-6951(1996)68:7<952:LZIHOC>2.0.ZU;2-E
Abstract
A low resistance Zn/Pd Ohmic contact scheme to p-InP based on solid ph ase reactions has been investigated, Contact resistivity in the mid-10 (-5) Ohm cm(-2) could be obtained for contacts with an atomic ratio of Zn to Pd of similar to 1.5. In addition to the solid phase regrowth p rocess, a Zn3P2/InP heterojunction is formed at the contact/semiconduc tor interface. The Ohmic contact formation mechanism is rationalized w ith the formation of Zn3P2/InP heterojunction. (C) 1996 American Insti tute of Physics.