INP GAASSB/INP AND INP/GAASSB/INGAASP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION/

Authors
BHAT R HONG WP CANEAU C KOZA MA NGUYEN CK GOSWAMI S
Citation
R. Bhat et al., INP GAASSB/INP AND INP/GAASSB/INGAASP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A CARBON-DOPED BASE GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 68(7), 1996, pp. 985-987
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
7
Year of publication
1996
Pages
985 - 987
Database
ISI
SICI code
0003-6951(1996)68:7<985:IGAIDB>2.0.ZU;2-7
Abstract
InP/GaAsSb double heterojunction bipolar transistors (DHBTs) may be an attractive alternative to InP/InGaAs DHBTs, since estimates of the ba nd alignment indicate that it is ideal for fabricating n-p-n DHBTs. We have demonstrated the first organometallic chemical vapor deposition grown InP/GaAsSb DHBTs, with carbon-doped bases having an f(t), and f( max) of 30 and 45 GHz, respectively. (C) 1996 American Institute of Ph ysics.