INFLUENCE OF MOLE FRACTION ON NORMAL INCIDENCE BOUND-FREE ABSORPTION IN P-DOPED INXGA1-XAS GAAS STRAINED QUANTUM-WELLS/

Authors
TADIC M IKONIC Z
Citation
M. Tadic et Z. Ikonic, INFLUENCE OF MOLE FRACTION ON NORMAL INCIDENCE BOUND-FREE ABSORPTION IN P-DOPED INXGA1-XAS GAAS STRAINED QUANTUM-WELLS/, Applied physics letters, 68(7), 1996, pp. 994-996
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
7
Year of publication
1996
Pages
994 - 996
Database
ISI
SICI code
0003-6951(1996)68:7<994:IOMFON>2.0.ZU;2-5
Abstract
Bound-free absorption in strained InxGa1-xAs/GaAs p-doped quantum well s is calculated for various values of the mole fraction x. The positio n dependence of Luttinger parameters is taken into account. Values of absorption exceeding those in unstrained structures by a factor of 2 a re found. Also, it is shown that in symmetric structures it suffices t o calculate the wave functions of only one block of the Luttinger-Kohn Hamiltonian. (C) 1996 American Institute of Physics.