OBSERVATION OF CHARGE ENHANCEMENT INDUCED BY GRAPHITE ATOMIC VACANCY - A COMPARATIVE STM AND AFM STUDY

Citation
Jr. Hahn et al., OBSERVATION OF CHARGE ENHANCEMENT INDUCED BY GRAPHITE ATOMIC VACANCY - A COMPARATIVE STM AND AFM STUDY, Physical review. B, Condensed matter, 53(4), 1996, pp. 1725-1728
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
4
Year of publication
1996
Pages
1725 - 1728
Database
ISI
SICI code
0163-1829(1996)53:4<1725:OOCEIB>2.0.ZU;2-R
Abstract
An atomic vacancy is produced on a graphite surface by bombarding it w ith low-energy (40-80 eV) beams of Ar+ ions, and its structure is exam ined by scanning tunneling microscopy (STM) and atomic force microscop y (AFM). The atomic vacancy is imaged as a surface protrusion in STM, while it is transparent in AFM. These two contradictory results are ex plained by the vacancy-induced enhancement of the partial charge densi ty of states at the carbon atoms near the vacancy. The charge enhancem ent can occur over tens of the surrounding carbon atoms for multiatom vacancy.