H-PLASMA-ANNEALED AND HOMOEPITAXIALLY GROWN DIAMOND(001) SURFACE-STRUCTURE STUDIED WITH REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

Diamond (001) surfaces have been studied using reflection high-energy electron diffraction after annealing in H plasma and after homoepitaxi al growth of diamond films. These surfaces show the transition from do uble-domain to nearly single-domain structures with misorientation ang les toward [110], which is dependent upon temperature. When surfaces a re close to the single-domain structure, type-A terraces dominate the H-plasma-annealed surfaces and type-B terraces are the major domain of the as-grown film surfaces. We infer that the step formation energies increase in the order of D-A, S-A+S-B, and D-B on the surfaces anneal ed in H plasma, and in the order of D-B, S-A+S-B, and D-A on the as-gr own film surfaces.