Ns. Lee et A. Badzian, H-PLASMA-ANNEALED AND HOMOEPITAXIALLY GROWN DIAMOND(001) SURFACE-STRUCTURE STUDIED WITH REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Physical review. B, Condensed matter, 53(4), 1996, pp. 1744-1747
Diamond (001) surfaces have been studied using reflection high-energy
electron diffraction after annealing in H plasma and after homoepitaxi
al growth of diamond films. These surfaces show the transition from do
uble-domain to nearly single-domain structures with misorientation ang
les toward [110], which is dependent upon temperature. When surfaces a
re close to the single-domain structure, type-A terraces dominate the
H-plasma-annealed surfaces and type-B terraces are the major domain of
the as-grown film surfaces. We infer that the step formation energies
increase in the order of D-A, S-A+S-B, and D-B on the surfaces anneal
ed in H plasma, and in the order of D-B, S-A+S-B, and D-A on the as-gr
own film surfaces.