ADSORPTION-ISOTHERMS AND THERMAL FLUCTUATIONS

Authors
Citation
Kr. Mecke et J. Krim, ADSORPTION-ISOTHERMS AND THERMAL FLUCTUATIONS, Physical review. B, Condensed matter, 53(4), 1996, pp. 2073-2082
Citations number
59
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
4
Year of publication
1996
Pages
2073 - 2082
Database
ISI
SICI code
0163-1829(1996)53:4<2073:AATF>2.0.ZU;2-V
Abstract
The influence of thermal fluctuations on adsorption isotherms is calcu lated within the context of a self consistent mean-held theory, and it is found that such fluctuations cannot be neglected in the analysis o f adsorption data. This result arises from our observation that substr ate-induced hindrance of thermal fluctuations can significantly alter the form of an adsorption isotherm, particularly in the thin-film regi me (approximate to 0-5 nm) which is most commonly probed by adsorption experiments. Previous experiments involving room-temperature adsorpti on on flat surfaces have been reanalyzed, and the reported discrepanci es with the Lifshitz theory of van der Waals forces are found to be mu ch reduced when thermal fluctuations of the thickness of the adsorbed layer are taken into account. Recently published data for nitrogen ads orption on rough substrates have also been reanalyzed, and the thermal fluctuations are found to be more important for thin adsorbed layers than undulations of the film induced by the roughness of the substrate . The analysis reveals that, as long suspected, the scaling regime of asymptotic divergence has not yet been reached for film thicknesses re maining below 5 nm.