FABRICATION, CHARACTERIZATION AND ANALYSIS OF LOW-THRESHOLD CURRENT-DENSITY 1.55-MU-M-STRAINED QUANTUM-WELL LASERS

Tertiarybutylarsine and tertiarybutylphosphine are less hazardous alte rnatives to arsine and phosphine as group V sources for crystal growth of InxGa1-xAsyP1-y alloys by metalorganic chemical vapor deposition. Compressive and tensile-strained quantum-well lasers emitting at 1.55 mu m have been fabricated using these sources. Threshold current densi ty as low as 93 A/cm(2), transparency current density as low as 38 A/c m(2) and internal efficiency of 91% were obtained for 1.5% compressive -strained single quantum-well lasers. These devices represent the best lasers emitting at this wavelength that have been reported in the lit erature. An analysis of some of the characteristics of these devices s uch as transparency current, differential gain and nonradiative recomb ination is also presented in this paper.