MAGNETOPOLARON EFFECT IN ONE-PHONON RESONANT RAMAN-SCATTERING FROM BULK SEMICONDUCTORS - DEFORMATION POTENTIAL

The theory of first-order resonant Raman scattering from bulk semicond uctors in the magnetopolaron range is developed. The calculations assu me a three-band model for the electronic excitations and scattering co nfiguration when the Raman phonon is emitted via an interband deformat ion potential interaction with lattice vibrations. The resonant polaro n coupling occurs through both, Frohlich and deformation potential mec hanisms. In the polaron range the incoming and outgoing resonances spl it into doublets, with the relative intensity and width being strongly dependent on laser frequency. The difference in the amplitude and wid th of the components in each doublet follows from the different weight of the nonrenormalized electron or hole states in the upper and lower branches of the renormalized excitations, and from the larger broaden ing of the upper branch.