INTRINSIC ELECTRON-MOBILITY IN NARROW GA0.47IN0.53AS QUANTUM-WELLS

Authors
MUKHOPADHYAY S NAG BR
Citation
S. Mukhopadhyay et Br. Nag, INTRINSIC ELECTRON-MOBILITY IN NARROW GA0.47IN0.53AS QUANTUM-WELLS, Physical review. B, Condensed matter, 48(24), 1993, pp. 17960-17966
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
24
Year of publication
1993
Pages
17960 - 17966
Database
ISI
SICI code
0163-1829(1993)48:24<17960:IEINGQ>2.0.ZU;2-Q
Abstract
Electron mobility in Ga0.47In0.53As quantum wells is calculated for we ll widths between 2 and 10 nm and for the temperatures of 4.2, 77, and 300 K. Effects of the finite barrier height, energy-band nonparabolic ity, mode confinement, electron screening, and degeneracy have been ta ken into account. The calculated values are found to be close to the e xperimental results for a well-width of 10 nm. Effects of the composit ion of the barrier layer are also discussed.