DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS BY MOCVD FROM THE TRIMETHYLALUMINUM-AMMONIA ADDUCT

Growth of epitaxial ALN from a directly bonded compound in the absence of any NH3, as described here, is an important technological advance. It is reported that the use of the adduct Me(3)AlNH(3) as a single-so urce precursor has allowed the epitaxial growth on sapphire of AlN fil ms of a quality suitable for buffer layers in the growth of device lay ers avoiding the disadvantages of traditional MOCVD of AlN. Details ar e given of deposition schemes, the carbon and oxygen contamination is discussed, and a probable deposition mechanism is proposed.