ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SIO2-TIO2 ANTIREFLECTIVE FILMS FROM )]TITANIUM,[(C4H9O)-C-T]SI-3-O-TI[(OC4H9)-C-T](3), WHICH IS A SINGLE-SOURCE ALKOXIDE PRECURSOR

Citation
Ck. Narula et al., ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SIO2-TIO2 ANTIREFLECTIVE FILMS FROM )]TITANIUM,[(C4H9O)-C-T]SI-3-O-TI[(OC4H9)-C-T](3), WHICH IS A SINGLE-SOURCE ALKOXIDE PRECURSOR, CHEMICAL VAPOR DEPOSITION, 2(1), 1996, pp. 13
Citations number
25
Categorie Soggetti
Materials Science, Coatings & Films","Materials Sciences, Composites",Electrochemistry,"Physics, Condensed Matter
Journal title
ISSN journal
09481907
Volume
2
Issue
1
Year of publication
1996
Database
ISI
SICI code
0948-1907(1996)2:1<13:ACOSA>2.0.ZU;2-G
Abstract
Antireflective SiO2-TiO2 films have potential applications in the auto motive industry provided an economical method can be found to produce high-quality films on a large scale. Following the discovery that alko xides M-O-M' can be suitable single-source precursors for the depositi on of multicomponent oxides, the preparation of [(C4H9O)-C-t]Si-3-O-Ti [(OC4H9)-C-t]4 is described along with its application as a single-sou rce precursor for the deposition of SiO2 and TiO2 films via atmospheri c-pressure CVD.