LIQUID-PHASE EPITAXIAL-GROWTH OF PURE AND DOPED GASB LAYERS - MORPHOLOGICAL EVOLUTION AND NATIVE DEFECTS

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from G a-rich and Sb-rich melts. The nucleation morphology of the grown layer s has been studied as a function of growth temperature and substrate o rientation. MOS structures have been fabricated on the epilayers to ev aluate the native defect content in the grown layers from the C-V char acteristics. Layers grown from antimony rich melts always exhibit p-ty pe conductivity. In contrast, a type conversion from p- to n- was obse rved in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts an d tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.