NUCLEATION AND GROWTH STUDY OF COPPER THIN-FILMS ON DIFFERENT SUBSTRATES AND WETTING LAYERS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
DUTTA A GOSWAMI J SHIVASHANKAR SA
Citation
A. Dutta et al., NUCLEATION AND GROWTH STUDY OF COPPER THIN-FILMS ON DIFFERENT SUBSTRATES AND WETTING LAYERS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Bulletin of Materials Science, 18(7), 1995, pp. 901-910
Citations number
9
Categorie Soggetti
Material Science
Journal title
Bulletin of Materials Science → ACNP
ISSN journal
02504707
Volume
18
Issue
7
Year of publication
1995
Pages
901 - 910
Database
ISI
SICI code
0250-4707(1995)18:7<901:NAGSOC>2.0.ZU;2-V
Abstract
Chemical vapour deposition of copper thin films on different diffusion barrier/adhesion promoter layers have been studied. Copper thin films were grown in low pressure CVD reactor, using Cu(dpm)(2) as precursor and argon as carrier gas. Growth rates, film adhesion to the substrat e, and surface morphology were studied in detail.