SPIN SPLITTING OF SINGLE 0D IMPURITY STATES IN SEMICONDUCTOR HETEROSTRUCTURE QUANTUM-WELLS

Citation
Mr. Deshpande et al., SPIN SPLITTING OF SINGLE 0D IMPURITY STATES IN SEMICONDUCTOR HETEROSTRUCTURE QUANTUM-WELLS, Physical review letters, 76(8), 1996, pp. 1328-1331
Citations number
20
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
76
Issue
8
Year of publication
1996
Pages
1328 - 1331
Database
ISI
SICI code
0031-9007(1996)76:8<1328:SSOS0I>2.0.ZU;2-5
Abstract
Zeeman splitting of the ground state of single impurities in the quant um well of a resonant tunneling heterostructure is reported. We determ ine the absolute magnitude of the effective magnetic spin splitting fa ctor g(perpendicular to) for a single impurity in a 44 Angstrom Al0.2 7Ga0.73As/GaAs/Al0.27Ga0.73As quantum well to be 0.28 +/- 0.02. This s ystem also allows for independent measurement of the electron tunnelin g rates through the two potential barriers and estimation of the occup ation probability of the impurity state in the quantum well.