VARIABLE-RANGE-HOPPING AND POSITIVE MAGNETORESISTANCE IN INSULATING Y1-XPRXBA2CU3O7 CRYSTALS

Authors
JIANG W PENG JL HAMILTON JJ GREENE RL
Citation
W. Jiang et al., VARIABLE-RANGE-HOPPING AND POSITIVE MAGNETORESISTANCE IN INSULATING Y1-XPRXBA2CU3O7 CRYSTALS, Physical review. B, Condensed matter, 49(1), 1994, pp. 690-693
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
1
Year of publication
1994
Pages
690 - 693
Database
ISI
SICI code
0163-1829(1994)49:1<690:VAPMII>2.0.ZU;2-Q
Abstract
We have measured in-plane resistivity and magnetoresistance of insulat ing Y1-xPrxBa2Cu3O7 (x approximately 0.63) crystals in magnetic fields up to 8 T. Mott variable-range-hopping transport rho=rho0 exp{(T0/T)a lpha} has been observed with alpha=1/4 at low temperatures suggesting the metal-insulator transition caused by Pr doping is due to carrier l ocalization. The magnetoresistance in the Mott variable-range-hopping regime is found to be positive and anisotropic, which may be caused by a decrease of the localiztion length induced by the magnetic field.