FIELD-EFFECT TRANSISTOR MADE WITH A SEXITHIOPHENE SINGLE-CRYSTAL

Authors
HOROWITZ G GARNIER F YASSAR A HAJLAOUI R KOUKI F
Citation
G. Horowitz et al., FIELD-EFFECT TRANSISTOR MADE WITH A SEXITHIOPHENE SINGLE-CRYSTAL, Advanced materials, 8(1), 1996, pp. 52
Citations number
25
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
8
Issue
1
Year of publication
1996
Database
ISI
SICI code
0935-9648(1996)8:1<52:FTMWAS>2.0.ZU;2-V
Abstract
For the fabrication of organic transistors sexithiophene (6T) is one o f the most promising materials. Since high purity improves the transis tor performance of 6T, the FET described here was built on an ultrapur e sexithiophene single crystal, shown in the figure as a gray block. T he characteristics of this transistor-better than those of FETs based on evaporated polycrystalline sexithiophene-are presented.