TOTAL INTERNAL-REFLECTION OPTICAL SWITCH WITH INJECTION REGION ISOLATED BY OXYGEN-ION IMPLANTATION

Authors
ZHUANG WR DUAN JN ZOU ZZ YANG PS SHI ZW SUN FR GAO JH
Citation
Wr. Zhuang et al., TOTAL INTERNAL-REFLECTION OPTICAL SWITCH WITH INJECTION REGION ISOLATED BY OXYGEN-ION IMPLANTATION, Fiber and integrated optics, 15(1), 1996, pp. 27-36
Citations number
10
Categorie Soggetti
Optics
Journal title
Fiber and integrated optics → ACNP
ISSN journal
01468030
Volume
15
Issue
1
Year of publication
1996
Pages
27 - 36
Database
ISI
SICI code
0146-8030(1996)15:1<27:TIOSWI>2.0.ZU;2-C
Abstract
The characteristics of InGaAsP/InP total internal reflection optical s witches were improved by adopting Oxygen ion implantation in forming e lectrical isolation, which can confine injected carriers successfully and obtain good perpendicular reflective ''wall'' whose transparency i s controlled by injected carriers. Operating at 1.3-mu m wavelength, t he extinction ratio at the reflected port of the optical switch is 18. 5 dB at a low injection current of 26 mA and the off-state crosstalk i s -18.8 dB.