POLARIZATION-SENSITIVE PHOTOCURRENTS OF METAL-SEMICONDUCTOR STRUCTURES WITH FLAT AND MICRORELIEF INTERFACES

The dependence of the polarization photosensitivity on parameters of a multilayer surface-barrier structure (SBS) (metal (Ag, Au) - intrinsi c oxide - isotropic semiconductor (InP, GaAs)) with nat and microrelie f interfaces has been studied. The influence of metal layer thickness on the polarimetric effect was analyzed. Both spectral and angular cha racteristics of the SBS polarization photosensitivity were calculated. Comparisons between the calculated angular characteristics of transmi ssion coefficients for the light and those of the measured short-circu it photocurrent i(ph) for several wavelengths were made. To account fo r a microrelief effect on the SBS polarization photosensitivity, the e quivalent film method was used. The surface polariton excitation was s hown to be an additional mechanism of photosensitivity enhancement and affected its polarization sensitivity.