GROWTH OF CUGASE2 FILM BY MOLECULAR-BEAM EPITAXY

Cu-Ga-Se films of different composition prepared by MBE technique were examined by reflection high energy electron diffraction, electron pro be for micro analysis, X-ray diffraction and photoluminescence. The va lence stoichiometry of the films is fulfilled at unity molecularity, s howing that CuGaSe2 is possible to be grown by MBE. The valence stoich iometry is almost conserved in a wide range of molecularity of the fil ms. It is proven that the films have chalcopyrite structure over a rem arkably wide range of Cu-rich composition and that the CuGaSe2 films a re epitaxially grown with the c-axis perpendicular to the (001) plane of GaAs substrate. The low temperature photoluminescence on epitaxiall y grown films of nearly stoichiometric and Cu-rich composition show sh arp emission peaks at 1.71 eV attributed to exciton recombination, ind icating that the him quality is rather high.