Y. Fujita et al., KINETICS OF ANNEALING OF DANGLING BONDS IN SPUTTERED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(1), 1994, pp. 57-67
The kinetics of thermal annealing of dangling bonds created during pre
paration of amorphous Si (a-Si) and hydrogenated amorphous Si (a Si:H)
films by sputtering has been investigated on the basis of electron sp
in resonance experiments. Changes in the spin density with annealing t
ime up to 120 min were measured as a function of annealing temperature
ranging from 150 to 350 degrees C for a-Si and from 150 to 200 degree
s C for a-Si:H. It is shown that the annealing behaviour with time is
well fitted by a stretched-exponential function rather than by a bimol
ecular decay function. This suggests that the annealing kinetics of da
ngling bonds for both a-Si and a-Si : H can be accounted for by a disp
ersive process.