TXRF has been applied in combination with VPD to the analysis of trace
impurities in the native oxide layer of Si wafer surfaces down to the
range of 10(x) atoms cm(-2). Proper quantification of VPD/TXRF data r
equires calibration with microdroplet standard reference wafers. The p
recision of calibration function has been evaluated and found to allow
quantification at a high level of 3 sigma confidence with microdrople
t standard reference.