MEASUREMENT OF THRESHOLDS OF DAMAGE TO A CHARGE-COUPLED-DEVICE CAUSEDBY A Q-SWITCHED LASER

Authors
LU J NI XW LIN ZH HE AZ
Citation
J. Lu et al., MEASUREMENT OF THRESHOLDS OF DAMAGE TO A CHARGE-COUPLED-DEVICE CAUSEDBY A Q-SWITCHED LASER, Microwave and optical technology letters, 11(4), 1996, pp. 194-196
Citations number
5
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
11
Issue
4
Year of publication
1996
Pages
194 - 196
Database
ISI
SICI code
0895-2477(1996)11:4<194:MOTODT>2.0.ZU;2-X
Abstract
The interaction process of laser and MOS-type charge-coupled devices ( CCD) has been analyzed in brief. Several kinds of damage thresholds, i ncluding optical breakdown threshold, direct damage threshold, and las er energy threshold (which leads to complete failure of the device) pr oduced by a Q-switched Nd:YAG laser have been put forward and obtained experimentally. (C) 1996 John Wiley & Sons, Inc.