FABRICATION OF FREESTANDING MICROTRANSDUCERS IN GAAS WITH AN ELECTRON-BEAM-INDUCED OXIDE MASK AND CL-2 ETCHING

Authors
HOYLE PC CLEAVER JRA AHMED H
Citation
Pc. Hoyle et al., FABRICATION OF FREESTANDING MICROTRANSDUCERS IN GAAS WITH AN ELECTRON-BEAM-INDUCED OXIDE MASK AND CL-2 ETCHING, Sensors and actuators. A, Physical, 50(1-2), 1995, pp. 31-37
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
50
Issue
1-2
Year of publication
1995
Pages
31 - 37
Database
ISI
SICI code
0924-4247(1995)50:1-2<31:FOFMIG>2.0.ZU;2-4
Abstract
Straight and chevron-shaped free-standing GaAs wires have been fabrica ted using an in situ process involving an electron-beam system with ga s injection at the sample. Patterned electron-beam-induced oxidation, defined by appropriate beam scanning, forms a masking layer for subseq uent Cl-2 etching. The fabrication of chevron-shaped wires is possible using undercut that occurred along etch-mask edges aligned to the [01 (1) over bar] direction and at about +/- 30 degrees to this direction. Straight free-standing wires have been used in a gas-pressure microse nsor.