LOW-TEMPERATURE SILICON DIRECT BONDING AND INTERFACE BEHAVIORS

Authors
JIAO JW LU DR XIONG B WANG WY
Citation
Jw. Jiao et al., LOW-TEMPERATURE SILICON DIRECT BONDING AND INTERFACE BEHAVIORS, Sensors and actuators. A, Physical, 50(1-2), 1995, pp. 117-120
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
50
Issue
1-2
Year of publication
1995
Pages
117 - 120
Database
ISI
SICI code
0924-4247(1995)50:1-2<117:LSDBAI>2.0.ZU;2-V
Abstract
In this paper, the realization and quality evaluation of low-temperatu re silicon direct bonding (LTSDB) have been described. Through high-re solution electron microscope (HREM) and secondary ion mass spectroscop y (SIMS) methods, the bonding interface characteristics have been inve stigated. The interface structure, such as dislocations and random dis tribution of SiO2, are observed in HREM images. The SIMS results show the distribution near the bonding interface and other properties of Si -H atomic groups. We propose a new two-step LTSDB mechanism.