PROPERTIES OF ABOVE-BARRIER ELECTRONIC STATES IN MULTIBARRIER STRUCTURES

In the present work we report the detailed study of the above-barrier electronic states in the multi-barrier structures by using the transfe r matrix technique. The energy levels and the corresponding wavefuncti ons are calculated by solving the Schrodinger equation directly Analyt ical analysis is presented confirming the formation of subband structu re, similar to that determined by Kronig-Penney model. Each subband co ntains N energy states with N being the number of periods in the struc ture. Furthermore, our calculations demonstrate that in each subband t here is one energy state whose wavefunction is always localized in the barrier regions, while others remain partly localized in general. The se localized states satisfy the constructive condition k(b)b = n pi co nsistence with experiments, where kb is the wave vector in the barrier region, b is the barrier width, and n is an integer.