AN ANALYTICAL MODERATE INVERSION DRAIN CURRENT MODEL FOR POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS CONSIDERING DEEP AND TAIL STATES IN THE GRAIN-BOUNDARY

This paper presents an analytical moderate inversion drain current mod el for polycrystalline silicon thin-film transistors based on localize d deep and tail states in the grain boundary regions. As verified by t he published data, using the analytical model, that as compared to the subthreshold region in the bulk silicon metal-oxide-silicon (MOS) dev ices, the less steep slope of the moderate inversion region has been e xplained as due to the lowering in the potential barrier height. In ad dition, the analytical model provides an accurate prediction that with a smaller average trap state density from the grain boundary regions, the polysilicon thin-film transistor shows a sharper moderate inversi on behavior. (C) 1996 American Institute of Physics.