PHOTOREFLECTANCE OF CU-BASED I-III-VI2 HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Photoreflectance (PR) spectroscopy has been developed as a powerful te chnique for the characterization of the heteroepitaxial layer of the C u-III-VI2, semiconductors having the chalcopyrite structure. PR measur ements have been carried out in the energy region near the fundamental absorption edge at 77 K for the heteroepitaxial layers of CuAlSe2, Cu GaSe2, CuGaS2 and CuAlS2 grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition. Crystal quali ty, stress, and the crystallographic orientation have been well charac terized, based on the analysis of the PR spectra in terms of transitio n energy, intensity, and broadening parameter. (C) 1996 American Insti tute of Physics.