PRECURSOR ROUTE PENTACENE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Citation
Ar. Brown et al., PRECURSOR ROUTE PENTACENE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 79(4), 1996, pp. 2136-2138
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
4
Year of publication
1996
Pages
2136 - 2138
Database
ISI
SICI code
0021-8979(1996)79:4<2136:PRPMFT>2.0.ZU;2-J
Abstract
Metal-insulator-semiconductor field-effect transistors have been const ructed with pentacene as the active semiconductor. The pentacene is pr ocessed by spin coating from a soluble precursor. A simple thermal con version yields transistors with carrier mobilities as high as 9 x 10(- 3) cm(2) V-1 s(-1) and current modulations of the order of 10(5). Depl etion of charge is essential to the device operation. Data for an inve rtor exhibiting voltage amplification are presented. (C) 1996 American Institute of Physics.