COMPARISON OF ANNEALING KINETICS IN CRYSTALLINE AND AMORPHOUS INP

Relaxation of ion-induced strain in crystalline InP is compared with s tructural relaxation of amorphous InP. Crystalline InP was bombarded w ith Se ions at low fluence to produce a damaged surface layer. The roo m temperature evolution of strain in this layer was determined by high -resolution x-ray diffraction and compared to the evolution of the def ect-activated viscosity of amorphous InP during similar room temperatu re structural relaxation. Both processes can be described by double ex ponential decay functions with characteristic times of a few hours to a few days. (C) 1996 American Institute of Physics.